In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases

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Jpn. J. Appl. Phys. 47 (2008) pp. 4788-4791  | Previous Article | | Next Article |  | Table of Contents | | Full Text PDF (525K)| | Buy This Article | Thick-Film Structure Geometry Effect on Carbon Nanotubes cake making courses Synthesized by Chemical Vapor Deposition
Kuang-Chung Chen 1 , Chia-Fu Chen 1,2 , Wha-Tzong Whang 1 , Shu-Hsing Lee 3 , Kuo-Feng Chen 3 , Chian-Liang Hwang 4 , Nyan-Hwa Tai 4 , Ming-Hung Lin 3 , and Lih-Hsiung Chan 3 1 Department of Materials Science and Engineering, cake making courses National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C. 2 Institute of Material and System Engineering, MingDao University, Changhua, Taiwan 52345, R.O.C. 3 Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan 310, R.O.C. 4 Department of Materials Science and Engineering, cake making courses National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film cake making courses normal triode structures may range from 10 to 50 µm. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance cake making courses in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.
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